Product Category: MOSFET
RoHS: No
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: ۱ Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: ۶۰ V
Id – Continuous Drain Current: ۵۰ A
Rds On – Drain-Source Resistance: ۱۸ mOhms
Vgs – Gate-Source Voltage: ۲۰ V
Maximum Operating Temperature: + ۱۷۵ C
Configuration: Single
Fall Time: ۲۵۰ ns
Height: ۹.۰۱ mm
Length: ۱۰.۴۱ mm
Minimum Operating Temperature: – ۵۵ C
Pd – Power Dissipation: ۱۹۰ W
Rise Time: ۲۵۰ ns
Series: IRFZ48
Transistor Type: ۱ N-Channel
Typical Turn-Off Delay Time: ۲۱۰ ns
Typical Turn-On Delay Time: ۸.۱ ns
RoHS: No
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: ۱ Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: ۶۰ V
Id – Continuous Drain Current: ۵۰ A
Rds On – Drain-Source Resistance: ۱۸ mOhms
Vgs – Gate-Source Voltage: ۲۰ V
Maximum Operating Temperature: + ۱۷۵ C
Configuration: Single
Fall Time: ۲۵۰ ns
Height: ۹.۰۱ mm
Length: ۱۰.۴۱ mm
Minimum Operating Temperature: – ۵۵ C
Pd – Power Dissipation: ۱۹۰ W
Rise Time: ۲۵۰ ns
Series: IRFZ48
Transistor Type: ۱ N-Channel
Typical Turn-Off Delay Time: ۲۱۰ ns
Typical Turn-On Delay Time: ۸.۱ ns
FEATURES
• Repetitive Avalanche Rated
• Ultra Low On-Resistance
• Very Low Thermal Resistance
• ۱۷۵ °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/ECPRODUCT SUMMARY
VDS (V) 60
RDS(on) (Ω) VGS = 10 V 0.018
Qg (Max.) (nC) 110
Qgs (nC) 29
Qgd (nC) 36
Configuration Single
• Repetitive Avalanche Rated
• Ultra Low On-Resistance
• Very Low Thermal Resistance
• ۱۷۵ °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/ECPRODUCT SUMMARY
VDS (V) 60
RDS(on) (Ω) VGS = 10 V 0.018
Qg (Max.) (nC) 110
Qgs (nC) 29
Qgd (nC) 36
Configuration Single
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